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Structural and morphological analysis of thin films for microelectronic application by X-ray diffraction, X-ray reflectivity, Total reflection X-ray fluorescence. Study of atomic layer deposition phenomena for the deposition of oxydes. Study of chalcogenide compounds
Scientific Production
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 16 Issue: 27 Pages: 35825-35833
Materials Advances [Royal Society of Chemistry], Volume: 5 Issue: 9 Pages: 3992-3997
Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories
Journal of Applied Physics [AIP Publishing], Volume: 133 Issue: 22
Brush Layers of Bioinspired Polypeptoids for Deterministic Doping of Semiconductors
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 12 Pages: 6029-6037
ACS Applied Polymer Materials [American Chemical Society], Volume: 4 Issue: 10 Pages: 7191-7203
IEEE Transactions on Electron Devices [IEEE], Volume: 69 Issue: 8 Pages: 4342 - 4348
ACS Applied Materials & Interfaces [American Chemical Society],
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 10 Pages: 1623
Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 135
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3358
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films
The Journal of Physical Chemistry C [American Chemical Society],
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 9 Pages: 5135-5144
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires
Coatings [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 718
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Advanced Functional Materials [Wiley-VCH], Pages: 2109361
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
Advanced Materials Interfaces [], Volume: 7 Issue: 19 Pages: 2000905
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 509 Pages: 166885
ALD growth of ultra-thin Co layers on the topological insulator Sb 2 Te 3
Nano Research [Tsinghua University Press], Volume: 13 Issue: 2 Pages: 570-575
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 34 Pages: 19936-19942
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Small [], Volume: 15 Issue: 37 Pages: 1901743
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636
In-doped Sb nanowires grown by MOCVD for high speed phase change memories.
Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121
In-doped Sb nanowires grown by MOCVD for high speed phase change memories
Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland],
Sensors and Actuators A: Physical [Elsevier], Volume: 282 Pages: 124-131
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 9 Pages: 4633-4641
Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12
Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 21 Pages: 213103
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 34 Issue: 5 Pages: 051510
Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550° C
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 7 Pages: 544-548
Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476
Atomic Layer Deposition of hexagonal ErFeO 3 thin films on SiO 2/Si
Thin Solid Films [Elsevier], Volume: 604 Pages: 18-22
MOCVD growth and structural characterization of In–Sb–Te nanowires
physica status solidi (a) [], Volume: 213 Issue: 2 Pages: 335-338
A Novel Sb2Te3 Polymorph Stable at the Nanoscale
Chemistry of Materials [American Chemical Society], Volume: 27 Issue: 12 Pages: 4368-4373
Solid-state dewetting of ultra-thin Au films on SiO {sub 2} and HfO {sub 2}
Nanotechnology [], Volume: 25
Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
Nanotechnology [IOP Publishing], Volume: 25 Issue: 49 Pages: 495603
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 12 Pages: 121903
Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49
Thin solid films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [], Volume: 563
Thermal properties of In–Sb–Te films and interfaces for phase change memory devices
Microelectronic engineering [Elsevier], Volume: 120 Pages: 3-8
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D907
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 12 Pages: 1107-1111
High temperature thermal conductivity of amorphous Al2O3 thin films grown by low temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
Structural and electrical analysis of In–Sb–Te‐based PCM cells
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 11 Pages: 1009-1013
High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395
Thermal resistance at Al-Ge2Sb2Te5 interface
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 18 Pages: 181907
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 370 Pages: 323-327
Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory
Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14
Thin solid films [Elsevier], Volume: 533 Pages: 66-69
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 13 Pages: 131603
ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11
Inverse Problems in Science and Engineering [Taylor & Francis Group], Volume: 20 Issue: 7 Pages: 941-950
Electronic properties of crystalline Ge1-xSbxTey thin films
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 102105
XPS composition study of stacked Si oxide/Si nitride/Si oxide nano‐layers
Surface and interface analysis [John Wiley & Sons, Ltd], Volume: 44 Issue: 8 Pages: 1209-1213
Surface & Interface Analysis: SIA [], Volume: 44 Issue: 8
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107
Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 7 Pages: 074013
ECS Meeting Abstracts [IOP Publishing], Issue: 28 Pages: 2457
Chemistry of Materials [American Chemical Society], Volume: 24 Issue: 6 Pages: 1080-1090
Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires
Nano letters [American Chemical Society], Volume: 12 Issue: 3 Pages: 1509-1515
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224
Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 3 Pages: H220
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 23 Pages: 232907
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 9
Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103
Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 8 Pages: G194
Dynamics of laser-induced phase switching in GeTe films
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 12 Pages: 123102
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 481
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 431
Structural and electrical properties of Er-doped HfO 2 and of its interface with Ge (001)
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 415-418
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 419-422
Au-catalyzed self assembly of GeTe nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 315 Issue: 1 Pages: 152-156
Journal of Physics: Conference Series [IOP Publishing], Volume: 278 Issue: 1 Pages: 012024
Applied Physics Express [], Volume: 4 Pages: 094103
O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si (100) and Ge (100) substrates
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 8 Pages: 084108
Evaluation of HfLaOx as Blocking Layer for Innovative Nonvolatile Memory Applications
ECS Transactions [IOP Publishing], Volume: 33 Issue: 3 Pages: 417
LaHfOx Films Analyses for NVM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 22 Pages: 1523
LaHfOx Films Analyses for NVM Applications
Meeting Abstracts [The Electrochemical Society], Issue: 22 Pages: 1523-1523
Ultraviolet optical near-fields of microspheres imprinted in phase change films
Applied physics letters [American Institute of Physics], Volume: 96 Issue: 19 Pages: 193108
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 18 Pages: 182901
Journal of Physics: Conference Series [IOP Publishing], Volume: 214 Issue: 1 Pages: 012102
Rare earth-based high-k materials for non-volatile memory applications
Microelectronic engineering [Elsevier], Volume: 87 Issue: 3 Pages: 290-293
Journal of Physics. Conference Series (Online) [], Volume: 214
Thermal characterization of the Si O 2-Ge 2 Sb 2 Te 5 interface from room temperature up to 400° C
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044314
Si nanocrystal synthesis in HfO {sub 2}/SiO/HfO {sub 2} multilayer structures
Nanotechnology (Print) [], Volume: 21
Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures
Nanotechnology [IOP Publishing], Volume: 21 Issue: 5 Pages: 055606
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 12 Pages: 122902
Process dependence of BTI reliability in advanced HK MG stacks
Microelectronics Reliability [Pergamon], Volume: 49 Issue: 9-11 Pages: 982-988
Dehydrogenation at the Fe/Lu 2 O 3 interface upon rapid thermal annealing
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing
Journal of magnetism and magnetic materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Thermal and electrical characterization of materials for phase-change memory cells
Journal of Chemical & Engineering Data [American Chemical Society], Volume: 54 Issue: 6 Pages: 1698-1701
Chemical and structural properties of a TaN/HfO2 gate stack processed using atomic vapor deposition
Journal of The Electrochemical Society [IOP Publishing], Volume: 156 Issue: 7 Pages: G78
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 27 Issue: 2 Pages: L1-L7
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 3 Pages: 033520
Hot-wire chemical vapor growth and characterization of crystalline GeTe films
Journal of crystal growth [North-Holland], Volume: 311 Issue: 2 Pages: 362-367
Journal of The Electrochemical Society [The Electrochemical Society], Volume: 156 Issue: 1 Pages: H1-H6
Journal of the Electrochemical Society [], Volume: 156 Issue: 1 Pages: H1
Chemical and Structural Properties of a TaN
Journal of the Electrochemical Society [Electrochemical Society], Volume: 156 Issue: 7
Chemical vapor deposition of chalcogenide materials for phase-change memories
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2338-2341
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057
Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240
Journal of The Electrochemical Society [IOP Publishing], Volume: 156 Issue: 1 Pages: H1
ALD-Grown Rare Earth Oxides for Advanced Gate Stacks
ECS Transactions [IOP Publishing], Volume: 13 Issue: 1 Pages: 77
Interface Study in a" Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide
ECS Transactions [IOP Publishing], Volume: 16 Issue: 5 Pages: 99
Epitaxial anatase HfO 2 on high-mobility substrate for ultra-scaled CMOS devices
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 241-244
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240
Thin Solid Films [Elsevier], Volume: 516 Issue: 22 Pages: 7962-7966
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H807
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
Chemistry of Materials [American Chemical Society], Volume: 20 Issue: 11 Pages: 3557-3559
Epitaxial growth of cubic Gd2O3 thin films on Ge substrates
Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048
Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment
Journal of Applied Crystallography [International Union of Crystallography], Volume: 41 Issue: 1 Pages: 143-152
Amorphization dynamics of Ge 2 Sb 2 Te 5 films upon nano-and femtosecond laser pulse irradiation
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 2 Pages: 023516
Reproducability in X-Ray reflectometry: results from the first reflectivity round robin
Journal of Applied Crystallography [], Volume: 41 Pages: 143-15
Epitaxial phase of hafnium dioxide for ultrascaled electronics
Physical Review B [American Physical Society], Volume: 76 Issue: 15 Pages: 155405
ECS Transactions [IOP Publishing], Volume: 11 Issue: 4 Pages: 497
ECS Meeting Abstracts [IOP Publishing], Issue: 20 Pages: 1160
Zeitschrift für anorganische und allgemeine Chemie [WILEY‐VCH Verlag], Volume: 633 Issue: 11‐12 Pages: 2097-2103
Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 1886-1889
Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 2263-2266
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 3 Pages: 034513
An accurate low-frequency model for the 3 ω method
Journal of Applied Physics [American Institute of Physics], Volume: 101 Issue: 10 Pages: 104510
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 19 Pages: 193511
Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 18 Pages: 183521
ECS Transactions [IOP Publishing], Volume: 3 Issue: 3 Pages: 183
Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu
Journal of The Electrochemical Society [IOP Publishing], Volume: 153 Issue: 11 Pages: F271
Germanium diffusion during Hf O 2 growth on Ge by molecular beam epitaxy
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 12 Pages: 122906
Temperature dependence of transient and steady-state gate currents in Hf O 2 capacitors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 10 Pages: 103504
Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
Chemistry of materials [American Chemical Society], Volume: 18 Issue: 16 Pages: 3764-3773
High-k materials in flash memories
ECS Transactions [IOP Publishing], Volume: 1 Issue: 5 Pages: 91
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95
Site of Mn in Mn δ-doped GaAs: X-ray absorption spectroscopy
Physical Review B [American Physical Society], Volume: 73 Issue: 3 Pages: 035314
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Self-annealing and aging effect characterization on copper seed thin films
Microelectronic engineering [Elsevier], Volume: 82 Issue: 3-4 Pages: 289-295
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 11 Pages: 112904
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 7 Pages: 074315
International Heat Transfer Conference Digital Library [Begel House Inc.],
Simulation of micro-mirrors for optical MEMS
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 81-84
MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires
2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154
MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires
2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154
Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 95 Pages: 113-119
Overview of early publications on atomic layer deposition
14th International Conference on Atomic Layer Deposition, ALD 2014 [American Vacuum Society (AVS)],
On the early history of ALD: Molecular layering
14th International Conference on Atomic Layer Deposition, ALD 2014 [American Vacuum Society (AVS)],
2009 IEEE International Reliability Physics Symposium [IEEE], Pages: 362-366
2007 IEEE International Electron Devices Meeting [IEEE], Pages: 775-778
Amorphization dynamics of Ge 2 Sb 2 T3 5 films under nano-and femtosecond laser pulse irradiation
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on [IEEE], Pages: 1-1
Amorphization dynamics of Ge2Sb2Te5 films under nano- and femtosecond laser pulse irradiation
The European Conference on Lasers and Electro-Optics [Optical Society of America], Pages: CC4_5
Nano-scale characterization of high-k dielectric materials by conducting atomic force microscopy
14th International Winterschool on New Developments in Solid State Physics [],
Photothermal Radiometry applied in nanoliter melted tellurium alloys
Materials Challenges and Testing for Supply of Energy and Resources [Springer, Berlin, Heidelberg], Pages: 273-283
Mössbauer spectroscopy study of interfaces for spintronics
ISIAME 2008 [Springer, Berlin, Heidelberg], Pages: 371-376
Electrical characterization of rare earth oxides grown by atomic layer deposition
Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 203-223
Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs
Advanced Gate Stacks for High-Mobility Semiconductors [Springer, Berlin, Heidelberg], Pages: 181-209
CEMS characterisation of Fe/high-κ oxide interfaces
ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 1349-1353