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Surname: 
Tallarida
Firstname: 
Graziella
Position: 
Staff
Profile: 
Researcher
Phone: 
+390396035977
Activity: 

Deputy Director of the Unit.

Nanoscale characterization of materials and devices by scanning probe techniques with focus on the electrical and magnetic properties of thin films and nanostructures. Development of capacitive transducers for neuron interfacing. Investigation of protective coatings for optical microsystems.

Curriculum: 

GT graduated in Physics in 1993 at the University of Rome “La Sapienza” with a thesis on the electrical characterization and modelling of amorphous and polycristalline silicon thin film transistors for large area electronics. She continued on this research topic until December 1995, as research assistant at the Engineering Department of the University of Cambridge, UK.

In 1996 GT joined MDM Laboratory, where she was involved in the set up of the laboratory and started working on the characterization of materials for non-volatile memory devices and large scale integration.

Research Scientist since 2001, her main expertise is in the nanoscale characterization of materials and devices by scanning probe techniques, with focus on the electrical and magnetic properties of thin films and nanostructures and in the electrical characterization of devices.

GT has been actively involved in several national and international projects as local scientific contact (FIRB 2001 - RBAU01PYB3_004; MAE 9/2004; Cariplo 2005/1079; PRIN 2009 - 2009WPZM4S_002) and she regularly contributed to the industrial research projects with STMicroelectronics.

In 2007-2009 she was the coordinator of the EU project FP6-ICT-VERSATILE, focused on the crossbar integration of resistive switching memory elements by the development of inorganic and hybrid inorganic-organic low temperature rectifying junctions.

Other activities in the recent past include the investigation by scanning tunneling microscopy in UHV of two-dimensional silicon monolayers (silicene) and the spatially resolved characterization by conductive-AFM and scanning kelvin probe force microscopy of thin dielectric films for resistive switching memory devices.

In 2010-2015 she was elected member of the CNR-IMM Advisory Council and since September 2015 she has been appointed Deputy Director of the Agrate Unit

Info: 
skype contact: grazia_at_work

Scientific Production

E Cianci, A Lamperti, G Tallarida, M Zanuccoli, C Fiegna, L Lamagna, S Losa, S Rossini, F Vercesi, D Gatti, C Wiemer

Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications

Sensors and Actuators A: Physical [Elsevier],

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors

Thin Solid Films [Elsevier], Volume: 616 Pages: 408-414

Maria Berdova, Xuwen Liu, Claudia Wiemer, Alessio Lamperti, Grazia Tallarida, Elena Cianci, Marco Fanciulli, Sami Franssila

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 34 Issue: 5 Pages: 051510

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

P‐164: Organic Light Emitting Transistors (OLETs) using ALD‐grown Al2O3 dielectric

SID Symposium Digest of Technical Papers [], Volume: 47 Issue: 1 Pages: 1737-1739

Maria Berdova, Claudia Wiemer, Alessio Lamperti, Grazia Tallarida, Elena Cianci, Luca Lamagna, Stefano Losa, Silvia Rossini, Roberto Somaschini, Salvatore Gioveni, Marco Fanciulli, Sami Franssila

Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476

G Seguini, J Llamoja Curi, S Spiga, G Tallarida, C Wiemer, M Perego

Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

Nanotechnology [IOP Publishing], Volume: 25 Issue: 49 Pages: 495603

S Brivio, G Tallarida, E Cianci, S Spiga

Formation and disruption of conductive filaments in a HfO2/TiN structure

Nanotechnology [IOP Publishing], Volume: 25 Issue: 38 Pages: 385705

R Mantovan, S Vangelista, C Wiemer, A Lamperti, G Tallarida, E Chikoidze, Y Dumont, M Fanciulli

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

Journal of Applied Physics [AIP], Volume: 115 Issue: 17 Pages: 17D907

Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Exploring the morphological and electronic properties of silicene superstructures

Applied Surface Science [North-Holland], Volume: 291 Pages: 109-112

S Vangelista, R Mantovan, A Lamperti, G Tallarida, B Kutrzeba-Kotowska, S Spiga, M Fanciulli

Low-temperature atomic layer deposition of MgO thin films on Si

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304

S Brivio, D Perego, G Tallarida, M Bestetti, S Franz, S Spiga

Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires

Applied Physics Letters [AIP], Volume: 103 Issue: 15 Pages: 153506

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Nanostructures: Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation (Adv. Funct. Mater. 35/2013)

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4339-4339

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Hindering the oxidation of silicene with non‐reactive encapsulation

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4340-4344

R Mantovan, A Lamperti, G Tallarida, L Baldi, M Mariani, B Ocker, S-M Ahn, I Barisic, D Ravelosona

Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO 2 substrates for magnetic memories

Thin solid films [Elsevier], Volume: 533 Pages: 75-78

Daniele Perego, Silvia Franz, Massimiliano Bestetti, Laura Cattaneo, Stefano Brivio, Grazia Tallarida, Sabina Spiga

Engineered fabrication of ordered arrays of Au–NiO–Au nanowires

Nanotechnology [IOP Publishing], Volume: 24 Issue: 4 Pages: 045302

S Brivio, G Tallarida, D Perego, S Franz, D Deleruyelle, Ch Muller, S Spiga

Low-power resistive switching in Au/NiO/Au nanowire arrays

Applied Physics Letters [AIP], Volume: 101 Issue: 22 Pages: 223510

Mario Arcari, Giuseppe Scarpa, Paolo Lugli, Graziella Tallarida, N Huby, E Guziewicz, Tomasz A Krajewski, M Godlewski

2-D finite-element modeling of ZnO Schottky diodes with large ideality factors

IEEE Transactions on Electron Devices [IEEE], Volume: 59 Issue: 10 Pages: 2762-2766

Daniele Chiappe, Carlo Grazianetti, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Local electronic properties of corrugated silicene phases

Advanced Materials [WILEY‐VCH Verlag], Volume: 24 Issue: 37 Pages: 5088-5093

Carlo Grazianetti, Alessandro Molle, Grazia Tallarida, Sabina Spiga, Marco Fanciulli

Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0. 53Ga0. 47As (001) Surfaces

The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751

R Dittmann, R Muenstermann, I Krug, D Park, F Kronast, A Besmehn, J Mayer, CM Schneider, Rainer Waser, Malgorzata Sowinska, Thomas Bertaud, Damian Walczyk, Sebastian Thiess, Christian Walczyk, Thomas Schroeder, Christian Lenser, Alexei Kuzmin, Aleksandr Kalinko, Juris Purans, Regina Dittmann, C Moreno, J Zabaleta, A Palau, J Gázquez, N Mestres, T Puig, C Ocal, X Obradors, Pablo Levy, N Ghenzi1, MJ Sanchez, MJ Rozenberg, P Stoliar, FG Marlasca, D Rubi, Sabina Spiga, Stefano Brivio, Grazia Tallarida, Daniele Perego, Silvia Franz, Damien Deleruyelle, Christophe Muller, Eilam Yalon, Shimon Cohen, Arkadi Gavrilov, Boris Meyler, Joseph Salzman, Dan Ritter

Nanosession: Valence Change Memories‐A Look Inside

Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 233-245

Daniele Perego, Silvia Franz, Massimiliano Bestetti, Stefano Brivio, Grazia Tallarida, Sabina Spiga

Electrodeposition of Arrays of Au/NiO/Au Nanowire Heterostructures for ReRAM Applications

Meeting Abstracts [The Electrochemical Society], Issue: 45 Pages: 3294-3294

R Mantovan, S Vangelista, B Kutrzeba-Kotowska, S Cocco, A Lamperti, G Tallarida, D Mameli, M Fanciulli

Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4820-4822

S Brivio, G Tallarida, D Perego, S Franz, D Deleruyelle

Additional information on Appl. Phys. Lett.

APPLIED PHYSICS LETTERS [], Volume: 101 Pages: 223510

Daniele Perego, Fahimeh Amiri, Laura Cattaneo, Silvia Franz, Massimiliano Bestetti, Grazia Tallarida, Stefano Brivio, Sabina Spiga

Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications

Meeting Abstracts [The Electrochemical Society], Issue: 35 Pages: 2226-2226

R Mantovan, A Lamperti, M Georgieva, G Tallarida, M Fanciulli

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 43 Issue: 6 Pages: 065002

G TALLARIDA

ZnO-based selectors for crossbar non-volatile memories

EPCOS2010 Proceedings [], Pages: 172-173

E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, K Kopalko, A Wójcik-Głodowska, E Przeździecka, W Paszkowicz, E Łusakowska, P Kruszewski, N Huby, G Tallarida, S Ferrari

ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

Journal of Applied Physics [AIP], Volume: 105 Issue: 12 Pages: 122413

E Katsia, N Huby, G Tallarida, B Kutrzeba-Kotowska, M Perego, S Ferrari, Frederik C Krebs, E Guziewicz, M Godlewski, V Osinniy, G Luka

Poly (3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

Applied Physics Letters [AIP], Volume: 94 Issue: 14 Pages: 143501

S Freddi, L D’Alfonso, M Collini, M Caccia, L Sironi, G Tallarida, S Caprioli, G Chirico

Excited-State Lifetime Assay for Protein Detection on Gold Colloids− Fluorophore Complexes

The Journal of Physical Chemistry C [American Chemical Society], Volume: 113 Issue: 7 Pages: 2722-2730

A TOMASZ, GRZEGORZ ŁUKA, ŁUKASZ WACHNICKI, BARTŁOMIEJ WITKOWSKI RAFAŁJAKIEŁA, Elżbieta Guziewicz, Marek Godlewski, NOLWENN HUBY, GRAZIA TALLARIDA

Optical and electrical characterization of defects in zinc oxide thin films grown by atomic layer deposition

Optica Applicata [], Volume: 39 Issue: 4

N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2442-2444

E Katsia, G Tallarida, B Kutrzeba-Kotowska, S Ferrari, E Bundgaard, R Sondergaard, FC Krebs

Integration of organic based Schottky junctions for crossbar non-volatile memory applications

Microelectronics engineering [ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA], Volume: 85 Issue: 12 Pages: 2439-2441

M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, K Kopalko, R Jakieła, S Yatsunenko, E Przeździecka, P Kruszewski, N Huby, G Tallarida, S Ferrari

Vertically stacked non-volatile memory devices–material considerations

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2434-2438

S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, M Alia, FG Volpe, M Fanciulli

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419

E Katsia, G Tallarida, B Kutrzeba-Kotowska, S Ferrari, E Bundgaard, R Sondergaard, FC Krebs

Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

ORGANIC ELECTRONICS [ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA], Volume: 9 Issue: 6 Pages: 1044-1050

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd 2 O 3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240

M Godlewski, E Guziewicz, L Wachnicki, T Krajewski, A Szczepanik, A Wojcik-Glodowska, K Kopalko, R Jakiela, S Yatsunenko, E Przezdziecka, P Kruszewski, J Szade, N Huby, G Tallarida, S Ferrari

ZnO by Atomic Layer Deposition for Vertically Stacked Non-Volatile Memory Devices

Meeting Abstracts [The Electrochemical Society], Issue: 36 Pages: 2358-2358

Luca Fumagalli, D Natali, Marco Sampietro, E Peron, F Perissinotti, G Tallarida, S Ferrari

Al2O3 as gate dielectric for organic transistors: Charge transport phenomena in poly-(3-hexylthiophene) based devices

Organic Electronics [North-Holland], Volume: 9 Issue: 2 Pages: 198-208

Alessandro Molle, Claudia Wiemer, MDNK Bhuiyan, Grazia Tallarida, Marco Fanciulli

Epitaxial growth of cubic Gd2O3 thin films on Ge substrates

Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048

Alessandro Molle, Michele Perego, Md Nurul Kabir Bhuiyan, Claudia Wiemer, Grazia Tallarida, Marco Fanciulli

The interface between Gd 2 O 3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths

Journal of Applied Physics [AIP], Volume: 102 Issue: 3 Pages: 034513

Alessandro Molle, Claudia Wiemer, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli, Giuseppe Pavia

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd 2 O 3 films on Ge (001) substrates

Applied physics letters [AIP], Volume: 90 Issue: 19 Pages: 193511

F Cannone, M Collini, L D'Alfonso, G Baldini, G Chirico, G Tallarida, P Pallavicini

Voltage regulation of fluorescence emission of single dyes bound to gold nanoparticles

Nano letters [American Chemical Society], Volume: 7 Issue: 4 Pages: 1070-1075

G Scarel, C Wiemer, G Tallarida, S Spiga, G Seguini, E Bonera, M Fanciulli, Y Lebedinskii, A Zenkevich, G Pavia, IL Fedushkin, GK Fukin, GA Domrachev

Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 153 Issue: 11 Pages: F271-F276

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen

Applied physics letters [AIP], Volume: 89 Issue: 8 Pages: 083504

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

Formation and stability of germanium oxide induced by atomic oxygen exposure

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 4-5 Pages: 673-678

Agostino Pirovano, Luca Perniola, Hiroshi Mizuta, Heike Riel, Damien Deleruyelle, Rainer Waser, Sidhu Maikap, Grazia Tallarida, Claudia Wiemer, Daniele Ielmini

Emerging non-volatile memories

IEDM Short Course [], Volume: 274 Issue: 5

Agostino Pirovano, Luca Perniola, Hiroshi Mizuta, Heike Riel, Damien Deleruyelle, Rainer Waser, Sidhu Maikap, Grazia Tallarida, Claudia Wiemer, Daniele Ielmini

Emerging non-volatile memories

IEDM Short Course [], Volume: 274 Issue: 5

G Brunoldi, S Guerrieri, SG Alberici, E Ravizza, G Tallarida, C Wiemer, T Marangon

Self-annealing and aging effect characterization on copper seed thin films

Microelectronic engineering [Elsevier], Volume: 82 Issue: 3-4 Pages: 289-295

D Botta, C Camerlingo, A Chiodoni, F Fabbri, R Gerbaldo, G Ghigo, L Gozzelino, F Laviano, B Minetti, CF Pirri, G Rombolà, G Tallarida, E Tresso, E Mezzetti

Intrinsic pinning and current percolation signatures in EJ characteristics of Si/YSZ/CeO2/YBCO layouts

The European Physical Journal B-Condensed Matter and Complex Systems [EDP sciences], Volume: 48 Issue: 3 Pages: 359-365

S Spiga, C Wiemer, G Tallarida, G Scarel, S Ferrari, G Seguini, M Fanciulli

Effects of the oxygen precursor on the electrical and structural properties of Hf O 2 films grown by atomic layer deposition on Ge

Applied Physics Letters [AIP], Volume: 87 Issue: 11 Pages: 112904

Angelica Chiodoni, Carlo Camerlingo, Roberto Gerbaldo, Laura Gozzelino, Francesco Laviano, Bruno Minetti, Candido F Pirri, Giuseppe Rombolà, Grazia Tallarida, Elena Tresso, Enrica Mezzetti

Transport characterization of silicon-YBCO buffered multilayers deposited by magnetron sputtering

IEEE transactions on applied superconductivity [IEEE], Volume: 15 Issue: 2 Pages: 3062-3065

S Kremmer, H Wurmbauer, C Teichert, G Tallarida, S Spiga, C Wiemer, M Fanciulli

Nanoscale morphological and electrical homogeneity of HfO 2 and ZrO 2 thin films studied by conducting atomic-force microscopy

Journal of applied physics [AIP], Volume: 97 Issue: 7 Pages: 074315

A Chiodoni, C Camerlingo, R Gerbaldo, L Gozzelino, F Laviano, B Minetti, CF Pirri, G Rombola, G Tallarida, E Tresso, E Mezzetti

HTS: Thin Films and Multilayers-HTS Thin Films Multilayers-Transport Characterization of Silicon-YBCO Buffered Multilayers Deposited by Magnetron Sputtering

IEEE Transactions on Applied Superconductivity [New York, NY: Institute of Electrical and Electronics Engineers, c1991-], Volume: 15 Issue: 2 Pages: 3062-3065

M Zanuccoli, C Fiegna, E Cianci, C Wiemer, A Lamperti, G Tallarida, L Lamagna, S Losa, S Rossini, F Vercesi, I Semenikhin

Simulation of micro-mirrors for optical MEMS

Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on [IEEE], Pages: 81-84

G Tallarida, N Huby, B Kutrzeba-Kotowska, S Spiga, M Arcari, G Csaba, P Lugli, A Redaelli, R Bez

Low temperature rectifying junctions for crossbar non-volatile memory devices

Memory Workshop, 2009. IMW'09. IEEE International [IEEE], Pages: 1-3

G Tallarida, N Huby, S Spiga, B Kutrzeba-Kotowska, P Lugli, G Csaba, M Arcari, E Guziewcz, M Godlewski, A Redaelli, R Bez

Zn-O based selectors for crosspoint mem devices

NVMTS09-Non-Volatile Memory Technology Symposium [],

G Tallarida, S Spiga, M Fanciulli

Scanning Capacitance Force Microscopy and Kelvin Probe Force Microscopy of Nanostructures Embedded in SiO2

Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials [Springer, Dordrecht], Pages: 405-411