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Surname: 
Debernardi
Firstname: 
Alberto
Position: 
Staff
Profile: 
Senior Researcher
Curriculum: 

Alberto Debernardi has mainly developed his professional experience within the framework of density functional theory. In March 1990 he took the degree dottore in Fisica, Università degli Studi di Pavia, full marks "cum laude", with a thesis on Density functional theory of Wigner crystallization in two dimensions. From February first, 1992 to January 31, 1993: adempimento obblighi di leva (Military/Civil Service). In October 1993, he took the degree Magister Philosophiae, SISSA Trieste, with a thesis on Anharmonic effects in crystals from density functional perturbation theory. In 1995 he took the PhD at the SISSA (Trieste) presenting a new method to study the anharmonic effects in crystals from density functional perturbation theory; he applied his method to compute the phonon lifetime of semiconductors (title of PhD thesis: Anharmonic properties of semiconductors from density functional perturbation theory). In 2001, he took the Degree Habilitation à Diriger des Recherches, at the Strasbourg University. After a postdoctoral experience at the MPI-Stuttgart were he collaborated with Cardona and Parrinello groups on vibrational properties of semiconductors and at the IPCMS of Strasbourg were he computed ab initio magneto optical and thermodynamics properties of metals, he was research associate (ricercatore) at INFM, at Trieste University/SISSA (2001-2004) where he studied by first principles magnetic semiconductors, interfaces and magnetic heterostructures. During the July 2002 and 2003 he was invited professor at the Tours University. Since summer 2004, he is senior researcher (primo ricercatore) at MDM laboratory, CNR-IMM, uos Agrate Brianza, he has been responsible of several national super computing projects. He has been principal investigator of the project "Oxides for Spin Electronic Applications" (OSEA) financed by Cariplo foundation (2010-2013). He has a large experience in the numerical simulation in condensed matter physics and his results are presented in more than 60 publications having over than thousand citations in scientific literature. His present research interests include high dielectric oxides, quantum computation, diluted magnetic semiconductors, nano-electronics, spintronics, solotronics, and topological insulators.

Scientific Production

BR Malonda-Boungou, S Meza-Aguilar, A Debernardi, AT Raji

Non-collinear magnetism in Mn monolayer on Ag (111) fcc: Density functional calculations

Computational Condensed Matter [Elsevier], Volume: 19 Pages: e00368

Mao Wang, A Debernardi, Y Berencén, R Heller, Chi Xu, Ye Yuan, Yufang Xie, R Böttger, L Rebohle, W Skorupa, M Helm, S Prucnal, Shengqiang Zhou

Breaking the doping limit in silicon by deep impurities

Physical Review Applied [American Physical Society], Volume: 11 Issue: 5 Pages: 054039

Mao Wang, A Debernardi, Y Berencén, R Heller, Chi Xu, Ye Yuan, Yufang Xie, R Böttger, L Rebohle, W Skorupa, M Helm, S Prucnal, Shengqiang Zhou

Breaking the doping limit in silicon by deep impurities

Physical Review Applied [American Physical Society], Volume: 11 Issue: 5 Pages: 054039

Matteo Ferri, Guido Fratesi, Giovanni Onida, Alberto Debernardi

Ab initio study of the structural, electronic, magnetic, and optical properties of silicene nanoribbons

Physical Review B [American Physical Society], Volume: 99 Issue: 8 Pages: 085414

Verena Plodeck, Nuh N Rahbari, Juergen Weitz, Christoph G Radosa, Michael Laniado, Ralf-Thorsten Hoffmann, Klaus Zöphel, Bettina Beuthien-Baumann, Joerg Kotzerke, Joerg van den Hoff, Ivan Platzek

FDG-PET/MRI in patients with pelvic recurrence of rectal cancer: first clinical experiences

European radiology [Springer Berlin Heidelberg], Volume: 29 Issue: 1 Pages: 422-428

Matteo Ferri, Guido Fratesi, Giovanni Onida, Alberto Debernardi

Optical properties of shortest-width zig-zag Silicene nano-ribbons: effects of local fields

Micro and Nano Engineering [Elsevier], Volume: 1 Pages: 37-41

Alessio Lamperti, Elena Cianci, Roberta Ciprian, Luca Capasso, Eugen Weschke, Alberto Debernardi

Magnetic properties of iron doped zirconia as a function of Fe concentration: From ab initio simulations to the growth of thin films by atomic layer deposition and their...

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 36 Issue: 2 Pages: 02D404

Alberto Debernardi, Luigi Marchetti

Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

Physical Review B [American Physical Society], Volume: 93 Issue: 24 Pages: 245426

Alberto Debernardi

Ab initio calculation of band alignment of epitaxial La 2 O 3 on Si (111) substrate

AIMS Materials Science [], Volume: 2 Issue: 3 Pages: 279-293

Guido Petretto, Andrea Massé, Marco Fanciulli, Alberto Debernardi

Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires

Physical Review B [American Physical Society], Volume: 91 Issue: 12 Pages: 125430

Patrizia Rosa, Davide Sangalli, Giovanni Onida, Alberto Debernardi

Ab initio electronic structure, optical, and magneto-optical properties of MnGaAs digital ferromagnetic heterostructures

Physical Review B [American Physical Society], Volume: 91 Issue: 7 Pages: 075207

DH Douma, R Ciprian, A Lamperti, P Lupo, E Cianci, D Sangalli, F Casoli, L Nasi, F Albertini, P Torelli, A Debernardi

Experimental versus ab initio x-ray absorption of iron-doped zirconia: Trends in O K-edge spectra as a function of iron doping

Physical Review B [American Physical Society], Volume: 90 Issue: 20 Pages: 205201

A Debernardi, D Sangalli, A Lamperti, E Cianci, P Lupo, F Casoli, F Albertini, L Nasi, R Ciprian, P Torelli

Electronic and magnetic properties of iron doped zirconia: Theory and experiment

Journal of Applied Physics [AIP], Volume: 115 Issue: 17 Pages: 17D718

Guido Petretto, Alberto Debernardi, Marco Fanciulli

Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation

Nano letters [American Chemical Society], Volume: 13 Issue: 10 Pages: 4963-4968

Davide Sangalli, Elena Cianci, Alessio Lamperti, Roberta Ciprian, Franca Albertini, Francesca Casoli, Pierpaolo Lupo, Lucia Nasi, Marco Campanini, Alberto Debernardi

Exploiting magnetic properties of Fe doping in zirconia

The European Physical Journal B [Springer-Verlag], Volume: 86 Issue: 5 Pages: 211

Alessio Lamperti, Elena Cianci, Roberta Ciprian, Davide Sangalli, Alberto Debernardi

Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition

Thin Solid Films [Elsevier], Volume: 533 Pages: 83-87

Davide Sangalli, Alessio Lamperti, Elena Cianci, Roberta Ciprian, Michele Perego, Alberto Debernardi

Role of oxygen vacancies on the structure and density of states of iron-doped zirconia

Physical Review B [American Physical Society], Volume: 87 Issue: 8 Pages: 085206

G Petretto, A Debernardi, M Fanciulli

Electronic properties of pristine and Se doped [001] silicon nanowires: an ab initio study

Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 12 Issue: 11 Pages: 8704-8709

Davide Sangalli, Andrea Marini, Alberto Debernardi

Pseudopotential-based first-principles approach to the magneto-optical Kerr effect: From metals to the inclusion of local fields and excitonic effects

Physical Review B [American Physical Society], Volume: 86 Issue: 12 Pages: 125139

A Debernardi

Ab initio study of phase transition and dielectric constants of high-κ HfO 2 as a function of Ge alloying

Physical Review B [American Physical Society], Volume: 85 Issue: 2 Pages: 024109

Davide Sangalli, Alberto Debernardi

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO 2: A first-principles approach

Physical Review B [American Physical Society], Volume: 84 Issue: 21 Pages: 214113

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Applied Physics Letters [AIP], Volume: 99 Issue: 23 Pages: 232907

Guido Petretto, Alberto Debernardi, Marco Fanciulli

Confinement effects and hyperfine structure in Se doped silicon nanowires

Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4509-4514

A Debernardi, M Fanciulli

Ab initio study of magnetic properties of complexes formed by an Fe impurity and an intrinsic interstitial defect in ZnO

Physical Review B [American Physical Society], Volume: 84 Issue: 2 Pages: 024415

A Debernardi, M Fanciulli

Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals

Physical Review B [American Physical Society], Volume: 81 Issue: 19 Pages: 195302

BR Malonda-Boungou, B M’Passi-Mabiala, A Debernardi, S Meza-Aguilar, C Demangeat

Magnetic map of Mn-based thin films on Ni/Cu

Physical Review B [American Physical Society], Volume: 81 Issue: 2 Pages: 024402

Alberto Debernardi

Ab initio study of structural, vibrational and dielectric properties of high-κ HfO2 as a function of doping

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012021

Alberto Debernardi, Marco Fanciulli

Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacancies

Physica B: Condensed Matter [North-Holland], Volume: 404 Issue: 23-24 Pages: 4791-4793

A Debernardi, M Fanciulli

Confinement effect in P doped spherical Si nanocrystals

Solid State Sciences [Elsevier Masson], Volume: 11 Issue: 5 Pages: 961-964

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Erratum to Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing Microelectronic Engineering 85 (2008) 2411-2413

Microelectronic Engineering [], Volume: 86 Issue: 10 Pages: 2138

Alberto Debernardi, Marco Fanciulli

A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit

Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures [Springer Berlin/Heidelberg], Pages: 221-239

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, PE Coulon, M Fanciulli

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2 O 3 films upon annealing

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2411-2413

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, Pierre-Eugène Coulon, M Fanciulli

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2411-2413

A Debernardi, C Wiemer, M Fanciulli

Epitaxial anatase HfO 2 on high-mobility substrate for ultra-scaled CMOS devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 241-244

R Mantovan, A Debernardi, M Fanciulli

Size dependence of the Mössbauer recoilless fraction in β-Sn nanocrystals

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 38 Pages: 385201

A Debernardi, M Fanciulli

The magnetic interaction of Fe doped ZnO with intrinsic defects: a first principles study

Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 451-453

Alberto Debernardi, Claudia Wiemer, Marco Fanciulli

Epitaxial phase of hafnium dioxide for ultrascaled electronics

Physical Review B [American Physical Society], Volume: 76 Issue: 15 Pages: 155405

Italy G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli MDM National Laboratory, CNR-INFM, Agrate Brianza, Milan 20041

Vibrational and electrical properties of hexagonal La 2 O 3 films

APPLIED PHYSICS LETTERS [American Institute of Physics], Volume: 91 Issue: 102901

A Debernardi, M Fanciulli

Ab initio study of magnetic interaction of Fe doped ZnO with intrinsic vacancies

Applied physics letters [AIP], Volume: 90 Issue: 21 Pages: 212510

A Debernardi, M Fanciulli

Structural and vibrational properties of high-dielectric oxides, HfO 2 and TiO 2: A comparative study

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 6 Pages: 1014-1019

Alberto Debernardi

Mn-doped GaN/AlN heterojunction for spintronic devices

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 530-532

A Debernardi, Alfonso Baldereschi, M Fanciulli

Computation of the Stark effect in P impurity states in silicon

Physical Review B [American Physical Society], Volume: 74 Issue: 3 Pages: 035202

Pascal Thibaudeau, Alberto Debernardi, Vinh Ta Phuoc, Sophie Da Rocha, François Gervais

Phonon anharmonicity in disordered MgAl 2 O 4 spinel

Physical review B [American Physical Society], Volume: 73 Issue: 6 Pages: 064305

A Debernardi, Maria Peressi, Alfonso Baldereschi

Spin polarization and band alignments at NiMnSb/GaAs interface

Computational materials science [Elsevier], Volume: 33 Issue: 1-3 Pages: 263-268

Maria Peressi, A Debernardi, S Picozzi, F Antoniella, Alessandra Continenza

Half-metallic Mn-doped Si (x) Ge (1− x) alloys: a first principles study

Computational materials science [Elsevier], Volume: 33 Issue: 1-3 Pages: 125-131

Alberto Debernardi, Guido Petretto, Marco Fanciulli

Donor Wave Functions Delocalization in Silicon Nanowires

APS Meeting Abstracts [],

Alberto Debernardi, Guido Petretto, Andrea Masse, Marco Fanciulli

Ab initio study of confinement effects and hyperfine structure in chalcogen doped Silicon nanostructures

APS Meeting Abstracts [],

Alberto Debernardi, Marco Fanciulli

A Robust and Fast Method toáComputeáShallowáStates withoutáAdjustableáParameters: SimulationsáforáaáSilicon-BasedáQubit

Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures [Springer, Berlin, Heidelberg], Pages: 221-239

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