ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 7 and forward current density as high as 10 4 A/cm 2 are reported. Results of the integration with NiO based switching memory elements are also shown.
10 May 2009
Memory Workshop, 2009. IMW'09. IEEE International