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Type: 
Conference
Description: 
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
Publisher: 
IEEE
Publication date: 
10 May 2009
Authors: 

G Tallarida, N Huby, B Kutrzeba-Kotowska, S Spiga, M Arcari, G Csaba, P Lugli, A Redaelli, R Bez

Biblio References: 
Pages: 1-3
Origin: 
2009 IEEE International Memory Workshop