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Type: 
Journal
Description: 
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 7 and forward current density as high as 10 4 A/cm 2 are reported. Results of the integration with NiO based switching memory elements are also shown.
Publisher: 
IEEE
Publication date: 
10 May 2009
Authors: 

G Tallarida, N Huby, B Kutrzeba-Kotowska, S Spiga, M Arcari, G Csaba, P Lugli, A Redaelli, R Bez

Biblio References: 
Pages: 1-3
Origin: 
Memory Workshop, 2009. IMW'09. IEEE International