The integration of polymers into microelectronic devices is a challenging task, because the standard processes used in device fabrication, most notably photolithography, are not fully compatible with such materials. In this study, we demonstrate a possible route for the integration of micron size organic based Schottky diodes in a crossbar architecture, by standard UV lithography. The proposed integration route features a limited number of process steps and prevents the exposure of the active materials to UV. This approach was developed using poly(3-hexylthiophene) as a model compound and was successfully applied to different organic semiconductors. The electrical characteristics of the as prepared junctions reveal the successful patterning and demonstrate the compatibility of the process sequence steps with the organic materials.
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA
1 Dec 2008
Volume: 9 Issue: 6 Pages: 1044-1050