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Type: 
Journal
Description: 
[1] Y. Xie,“Emerging memory technologies,” 2014.[2] L. Chua,“Resistance switching memories are memristors,” Applied Physics A, vol. 102, no. 4, pp. 765–783, 2011.[3] R. Picos, et al.,“Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors,” RADIOENGINEERING, vol. 24, no. 2, p. 421, 2015.[4] F. Corinto, et al.,“A theoretical approach to memristor devices,” 2015.[5] S. Brivio, et al.,“Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices” Appl. Phys. Lett. 109 133504 (2016).
Publisher: 
Publication date: 
1 Jan 2017
Authors: 

MM Al Chawa, R Picos, E Covi, S Brivio, E Garcia-Moreno, S Spiga

Biblio References: 
Origin: 
11th Spanish Conference on Electron Devices