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Present research in phase change optical recording is focused on further improving the performance of optical discs based mostly on GeSbTe compound films. Additionally, GeSbTe has recently become a key material for promising electrically addressed storage devices compatible with CMOS technology. Ge 2 Sb 2 Te 5 is considered the standard composition for a fast phase change material since both amorphization and crystallization can be triggered with laser pulses as short as 10 ns. However, using femtosecond laser pulses only amorphization has been reported so far, 1 due to the difficulty for stable crystalline nuclei to form and grow under the strong supercooling achieved. The dynamics of the phase change is of prime importance for improving device performance. The aim of this work is to study the amorphization dynamics upon pulsed laser irradiation (ns and fs) with highest temporal resolution (ns and fs …
Optical Society of America
Publication date: 
17 Jun 2007

J Siegel, D Puerto, CN Afonso, R Bez, A Pirovano, C Wiemer

Biblio References: 
Pages: CC4_5
The European Conference on Lasers and Electro-Optics