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Two dimensional MoS 2 nanosheets are complementary to graphene as post-silicon material for low power electronic, optoelectronic, and photovoltaic applications. However, when integrated as active channels in a transistor, the transport properties of a MoS 2 nanosheet can be dramatically influenced by the intrinsic interface traps which may degrade the carrier mobility or interfere with the radiative recombination. Electrically active interface traps are here quantified in different configurations incorporating MoS 2 nanosheet capacitors by means of temperature resolved admittance spectroscopy. The density of states of the interface traps is probed from midgap to the majority carrier band-edge therein making evidence of localized midgap traps and conduction band tail states. The resulting scenario is corroborated by the inspection of the local electronic properties explored by scanning tunneling spectroscopy. The …
Publication date: 
1 Mar 2015

Alessandro Molle, Davide Rotta, Stefano Paleari, Eugenio Cinquanta, Marco Fanciulli

Biblio References: 
Volume: 2015 Pages: H1. 234
APS March Meeting Abstracts