Our investigations on substitutional and interstitial Fe in the group IV semiconductors, from 57 Fe Mössbauer measurements following 57 Mn implantation, have been continued with investigations in 3C-SiC. Mössbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following comparison with Mössbauer parameters for Fe in Si, diamond and Ge, four Fe species are identified: two due to Fe in tetrahedral interstitial sites surrounded, respectively, by four C atoms (Fe iC) or four Si atoms (Fe i, Si) and two to Fe in (or close to) defect free or implantation damaged substitutional sites. An annealing stage at 300–500 K is evident. Above 600 K the Fe i, Si fraction decreases markedly, reaching close to zero intensity at 905 K. This is accompanied by a corresponding increase in the Fe i, C fraction.
Springer, Berlin, Heidelberg
1 Jan 2008