We have investigated the atomic layer deposition (ALD) on III-V substrates (ie, GaAs and In 0.53 Ga 0.47 As) of Al-doped ZrO 2 (Al-ZrO 2) films. The aim is to benefit from TMA-based chemistry as adopted in the ALD of Al 2 O 3 and to boost the dielectric constant of the stack. An in situ monitoring of the process with spectroscopic ellipsometry was carried out in order to address the formation of the first few monolayers of the films. The correlation with the structural and chemical characterization provides insights about the interface composition upon ALD. The electrical performances of capacitors fabricated on In 0.53 Ga 0.47 As including Al-ZrO 2 as gate dielectric exhibits encouraging properties compared to those acquired for Al 2 O 3.
The Electrochemical Society
25 Apr 2011
Volume: 35 Issue: 3 Pages: 431-440