Unipolar resistive switching memory (RRAM) based on transition metal-oxides may allow for post-Flash high-density non-volatile storage solutions with crossbar architecture. However, the reset current Ireset must be reduced to allow the downscaling of diode-selected crossbar arrays. This study addresses Ireset reduction under pulsed operation. First, the conditions for proper control of the size of the conductive filament (CF) during set are clarified. Then, pulsed reset is addressed, showing for the first time that Ireset reduction is limited by the competition between set and reset transitions in high-R semiconductor-like CFs.
22 May 2011
2011 3rd IEEE International Memory Workshop (IMW)