The redistribution of implanted 30Si atoms in isotopically purified 28SiO2 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities.
1 Jan 2007
Volume: 254 Issue: 1 Pages: 139-142
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms