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Type: 
Journal
Description: 
The self-assembly of Ge1Sb2Te4 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge1Sb2Te4 single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.
Publisher: 
American Chemical Society
Publication date: 
6 Mar 2012
Authors: 

Massimo Longo, Roberto Fallica, Claudia Wiemer, Olivier Salicio, Marco Fanciulli, Enzo Rotunno, Laura Lazzarini

Biblio References: 
Volume: 12 Issue: 3 Pages: 1509-1515
Origin: 
Nano letters