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Type: 
Journal
Description: 
In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high ION/IOFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.
Publisher: 
IEEE
Publication date: 
6 Aug 2012
Authors: 

Mario Arcari, Giuseppe Scarpa, Paolo Lugli, Graziella Tallarida, N Huby, E Guziewicz, Tomasz A Krajewski, M Godlewski

Biblio References: 
Volume: 59 Issue: 10 Pages: 2762-2766
Origin: 
IEEE Transactions on Electron Devices