Single spin detection is one of the most challenging tasks towards the realization of a solid‐state‐based quantum information processor. Spin‐dependent (SD) processes in the random telegraph signal (RTS) observed in silicon MOSFETs may lead to quantum bit read‐out. In addition, if successful, SD‐RTS will allow a direct identification and microscopic characterization of the trap responsible for the RTS. The experiment and its interpretation present a number of technical difficulties and open issues.. We discuss our experimental results towards a deep understanding of spin‐dependent RTS aiming at shading light on several open questions related to the influence of the microwave field, the static magnetic field, and the effective temperature of the electron gas.
14 Nov 2005
Volume: 800 Issue: 1 Pages: 125-130
AIP Conference Proceedings