This chapter reviews the mechanisms at the origin of unipolar resistive switching properties observed in some metal/oxide/metal systems. In a first approach the prototypical Pt/NiO/Pt model system is used to detail the physics at the microscopic scale and to describe the thermochemical origin of the switching using a simple cylindrical filament. Then, alternative models are introduced to account for specific oxide characteristics and electrode‐induced effects. The implications of these mechanisms on memory device properties and reliability are emphasized throughout the chapter.
Wiley‐VCH Verlag GmbH & Co. KGaA
22 Jun 2016
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications