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Type: 
Journal
Description: 
Mössbauer measurements have been performed on a GaAs single crystal sample following the implantation of radioactive 57Mn +  ($T_{{\raise0.7ex\hbox{$ min) ions. The Mn +  ions were implanted with 60 keV energy into a GaAs sample held at temperatures of 300–700 K in an implantation chamber. Implantation fluences were
Publisher: 
Springer Netherlands
Publication date: 
1 Jun 2009
Authors: 

K Bharuth-Ram, Haraldur Pall Gunnlaugsson, Gerd Weyer, R Mantovan, D Naidoo, R Sielemann, M Fanciulli, Guido Langouche, S Olafsson, Th Aigne, ISOLDE Collaboration

Biblio References: 
Volume: 191 Issue: 1-3 Pages: 115-120
Origin: 
Hyperfine Interactions