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Superconducting Ga-rich layers in Ge are fabricated by Ga implantation through a thin SiO 2 cover layer. After annealing in a certain temperature window, Ga accumulation at the SiO 2/Ge interface is observed. However, no Ga-containing crystalline phases are identified. Thus it is suggested that the volatile Ga is stabilized in an amorphous mixture of all elements available at the interface. Electrical transport measurements reveal p-type metallic conductivity and superconducting transition. The superconducting properties of the samples with high Ga concentration at the interface change dramatically with etching the amorphous surface layer. A critical temperature of 6 K is measured before, whereas after etching it drops below 1 K. Therefore, one can conclude that the superconducting transport is based on two different layers: a Ga-rich amorphous phase at the interface and a heavily Ga-doped Ge layer. Finally, the …
American Physical Society
Publication date: 
27 Apr 2012

J Fiedler, V Heera, R Skrotzki, T Herrmannsdörfer, M Voelskow, A Mücklich, S Facsko, H Reuther, M Perego, K-H Heinig, B Schmidt, W Skorupa, G Gobsch, M Helm

Biblio References: 
Volume: 85 Issue: 13 Pages: 134530
Physical Review B