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Type: 
Journal
Description: 
Atomic layer deposition (ALD) has received increasing attention in relation to the growth of high-permittivity( κ)(κ) rare-earth oxides for advanced gate stack applications. Transistor reliability strongly depends on the oxide/semiconductor interface properties. In this study, we perform transmission electron microscopy measurements in the high-resolution mode coupled with electron energy loss spectroscopy experiments to probe at the nanometric scale interface layer (IL) issues for ALD-grown La 2
Publisher: 
The Electrochemical Society
Publication date: 
1 Jan 2009
Authors: 

S Schamm, Pierre-Eugène Coulon, S Miao, S No Volkos, mL H Lu, L Lamagna, C Wiemer, D Tsoutsou, G Scarel, M Fanciulli

Biblio References: 
Volume: 156 Issue: 1 Pages: H1-H6
Origin: 
Journal of The Electrochemical Society