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Type: 
Journal
Description: 
The interface properties of thin Gd2O3 films grown on Ge(001) are studied as a function of the oxidizing species used during the deposition. The mediation of molecular oxygen during growth produces a crystalline oxide with an atomically sharp and contamination-free interface on the Ge substrate. Conversely, an interface layer of substoichiometric germanium oxide occurs whenever atomic oxygen radicals are used. The two different Gd2O3∕Ge interfacial configurations are discussed basing on thermodynamic arguments.
Publisher: 
AIP
Publication date: 
1 Aug 2007
Authors: 
Biblio References: 
Volume: 102 Issue: 3 Pages: 034513
Origin: 
Journal of Applied Physics