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Type: 
Journal
Description: 
La-doped ZrO2 thin films grown by O3-based atomic layer deposition directly on Ge(100) exhibit a dielectric constant of 29. Upon annealing in N2 at 400 °C, a high κ value >40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated.
Publisher: 
AIP
Publication date: 
21 Sep 2009
Authors: 

L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Biblio References: 
Volume: 95 Issue: 12 Pages: 122902
Origin: 
Applied Physics Letters