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Type: 
Journal
Description: 
The paper describes the application of X-ray photoelectron spectroscopy (XPS) based method to quantify changes in the electric dipole formed at the metal/dielectric interface following heat treatments of metal–oxide–semiconductor (MOS) stack in different environments. The presented results on Me (Me = Au, Ni)/dielectric (dielectric = HfO2, LaAlO3) evidence the oxygen vacancies generated in dielectric contribute to the effective work function changes.
Publisher: 
Elsevier
Publication date: 
1 Jul 2009
Authors: 

Andrei Zenkevich, Yuri Lebedinskii, Yuri Matveyev, Sabina Spiga, Luca Lamagna, Marco Fanciulli

Biblio References: 
Volume: 86 Issue: 7-9 Pages: 1777-1779
Origin: 
Microelectronic Engineering