-A A +A
Type: 
Journal
Description: 
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram.
Publisher: 
AIP
Publication date: 
1 Jan 2009
Authors: 

E Katsia, N Huby, G Tallarida, B Kutrzeba-Kotowska, M Perego, S Ferrari, FC Krebs, E Guziewicz, M Godlewski, V Osinniy, G Luka

Biblio References: 
Volume: 94 Issue: 14 Pages: 143501-143504
Origin: 
APPLIED PHYSICS LETTERS