ConclusionALD is shown to be a suitable technique for fabricating most advanced devices in microelectronics, spintronics, molecular electronics, and neuroelectronics. Growth temperature, surface preparation and functionalization, and precursor combinations, when properly selected, allow achieving the desired film properties. Improvements in ALD film quality require a deeper knowledge of the growth mechanisms involved, while substrates, precursors, and deposition parameters change.
1 Jan 2005
Materials for Information Technology