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The Fe3Si thin film is a good candidate as ferromagnetic electrode in spintronics devices due to its high spin polarization and high Curie temperature. The use of Fe3Si in contact with a thin SiO2 barrier can have various applications in practical devices, such as magnetic tunnel junctions. We report on the synthesis of Fe3Si/SiO2 structures, in one vacuum cycle, by pulsed laser deposition and glow‐discharge plasma oxidation followed by vacuum annealing. The structural and morphological characterization of the Fe3Si/SiO2 stacks is performed by in‐situ X‐ray photoelectron spectroscopy and with atomic force microscopy. Using a 57Fe tracer layer, conversion electron Mössbauer spectroscopy is performed at the Fe3Si/SiO2 interface, proving the formation of a ferromagnetic phase with no paramagnetic inclusions. Our experimental results indicate that the Fe3Si/SiO2 stack is a promising system for application in …
Publication date: 
1 Aug 2008

R Mantovan, M Georgieva, M Fanciulli, A Goikhman, N Barantcev, Yu Lebedinskii, A Zenkevich

Biblio References: 
Volume: 205 Issue: 8 Pages: 1753-1757
physica status solidi (a)