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Type: 
Journal
Description: 
Rare-earth silicates are promising materials for future microelectronic devices based on high dielectric constant dielectrics. In this work, we report the investigation of Lu silicate films deposited using atomic layer deposition on Si (100). The films were grown from tris [bis (trimethylsilyl) amido] lutetium—[( Me 3 Si) 2
Publisher: 
The Electrochemical Society
Publication date: 
1 Nov 2006
Authors: 

G Scarel, C Wiemer, G Tallarida, S Spiga, G Seguini, E Bonera, M Fanciulli, Y Lebedinskii, A Zenkevich, G Pavia, IL Fedushkin, GK Fukin, GA Domrachev

Biblio References: 
Volume: 153 Issue: 11 Pages: F271-F276
Origin: 
Journal of The Electrochemical Society