A new simple method combining hot-wire CVD and pulsed liquid injection of metal-organic precursor solutions was developed for production of various chalcogenide films. The grown thin Ge2Sb2Te5 films exhibit electrically and optically induced reversible phase change behavior, showing the potential of deposition method for phase change memory applications.
American Chemical Society
13 May 2008
Volume: 20 Issue: 11 Pages: 3557-3559
Chemistry of Materials