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Type: 
Journal
Description: 
Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La(iPrCp)3, Al(CH3)3 and O3 species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N2 atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant (κ) of 18 ± 1.
Publisher: 
Elsevier
Publication date: 
1 Jul 2009
Authors: 

G Congedo, S Spiga, L Lamagna, A Lamperti, Yu Lebedinskii, Yu Matveyev, A Zenkevich, P Chernykh, M Fanciulli

Biblio References: 
Volume: 86 Issue: 7-9 Pages: 1696-1699
Origin: 
Microelectronic Engineering