-A A +A
Type: 
Journal
Description: 
We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si∕SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs). A giant drain current fluctuation ΔI∕I up to 55% is observed at sub-Kelvin temperature in samples with a large channel width. The current variation is compatible with predictions for decanano MOSFETs at room temperature. The similarity suggests the formation of a quasi-one-dimensional conduction channel at gate voltages sufficiently close to the threshold voltage.
Publisher: 
AIP
Publication date: 
15 Jun 2008
Authors: 

Enrico Prati, Marco Fanciulli, Giorgio Ferrari, Marco Sampietro

Biblio References: 
Volume: 103 Issue: 12 Pages: 123707
Origin: 
Journal of Applied Physics