Resistive random access memories (RRAM) are one of the main constituents of the class of memristive technologies that are today considered very promising in semiconductor industry because of their high potential for several applications ranging from non-volatile memories to neuromorphic hardware. The latter application is particularly interesting, since bio-inspired electronic systems have the ability to treat ill-posed problems with higher efficiency than conventional computing paradigms. In this work, we focus on HfO 2-based ...
The Electrochemical Society
11 Jan 2017
Volume: 75 Issue: 32 Pages: 85-94