We demonstrate that the microstructure and electrical properties of Ge2Sb2Te5 films can be changed by a nanoscale mechanical process. Nanoscratching is used to define modified areas onto an as-deposited crystalline Ge2Sb2Te5 film. Scanning tunneling microscopy measurements show that the modified areas have a very low electrical conductivity. Micro-Raman measurements indicate that the mechanically induced microstructural changes are consistent with a phase transformation from crystalline to amorphous, which can be reversed by laser irradiation.
American Institute of Physics
1 Jan 2012
Volume: 111 Issue: 1 Pages: 016101
Journal of Applied Physics