Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly.
SP MAIK Nauka/Interperiodica
1 Jun 2010
Volume: 39 Issue: 3 Pages: 165-174