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Type: 
Journal
Description: 
La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.
Publisher: 
AIP
Publication date: 
13 Jul 2009
Authors: 

Alessandro Molle, Guy Brammertz, Luca Lamagna, Marco Fanciulli, Marc Meuris, Sabina Spiga

Biblio References: 
Volume: 95 Issue: 2 Pages: 023507
Origin: 
Applied Physics Letters