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Type: 
Journal
Description: 
The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures.
Publisher: 
AIP
Publication date: 
31 May 2010
Authors: 

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Biblio References: 
Volume: 96 Issue: 22 Pages: 222110
Origin: 
Applied physics letters