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Type: 
Conference
Description: 
We investigate transient currents in HfO 2 dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO 2 /SiO 2 bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications
Publisher: 
IEEE
Publication date: 
26 Mar 2006
Authors: 

C Monzio Compagnoni, AS Spinelli, A Bianchini, ANDREA LEONARDO Lacaita, S Spiga, M Fanciulli

Biblio References: 
Pages: 651-652
Origin: 
2006 IEEE International Reliability Physics Symposium Proceedings