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Bipolar resistive switching memories based on metal oxides offer a great potential in terms of simple process integration, memory performance, and scalability. In view of ultrahigh density memory applications, a reduced device size is not the only requirement, as the distance between different devices is a key parameter. By exploiting a bottom-up fabrication approach based on block copolymer self-assembling, we obtained the parallel production of bilayer Pt/Ti top electrodes arranged in periodic arrays over the HfO2/TiN surface, building memory devices with a diameter of 28 nm and a density of 5 × 1010 devices/cm2. For an electrical characterization, the sharp conducting tip of an atomic force microscope was adopted for a selective addressing of the nanodevices. The presence of devices showing high conductance in the initial state was directly connected with scattered leakage current paths in the bare oxide …
American Chemical Society
Publication date: 
10 Mar 2015

Jacopo Frascaroli, Stefano Brivio, Federico Ferrarese Lupi, Gabriele Seguini, Luca Boarino, Michele Perego, Sabina Spiga

Biblio References: 
Volume: 9 Issue: 3 Pages: 2518-2529
ACS nano