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Type: 
Journal
Description: 
The evolution of HfO2(3–5 nm)/SiO2(0.5 nm)/Si(1 0 0) stacks during vacuum annealing was monitored in situ with the combination of X-ray photoelectron spectroscopy and low energy ion scattering techniques and supplemented with atomic force microscopy analysis to investigate the mechanism that triggers HfO2 degradation with Hf silicide formation. The reduction of SiO2 interfacial layer and the formation of local paths for SiO escape into vacuum are believed to be critical at vacuum annealing above T > 850 °C for the reaction between HfO2 and Si to start and eventually lead to the degradation of the former.
Publisher: 
Pergamon
Publication date: 
1 Apr 2007
Authors: 

A Zenkevich, Yu Lebedinskii, G Scarel, Marco Fanciulli, A Baturin, N Lubovin

Biblio References: 
Volume: 47 Issue: 4-5 Pages: 657-659
Origin: 
Microelectronics Reliability