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Type: 
Journal
Description: 
We charge an individual donor quantum dot with an electron originally stored in another quantum dot in its proximity. The single arsenic donor quantum dot and the electrostatic quantum dot in parallel are contained in a silicon nanometric field effect transistor. Their different coupling capacitances with the control and back gates determine a honeycomb pattern at high control gate voltage. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor quantum dot toward the realization of a physical qubit for quantum information processing applications.
Publisher: 
AIP
Publication date: 
31 Jan 2011
Authors: 

Enrico Prati, Matteo Belli, Simone Cocco, Guido Petretto, Marco Fanciulli

Biblio References: 
Volume: 98 Issue: 5 Pages: 053109
Origin: 
Applied physics letters